GTO (Reverse Conducting)

Purpose

Ideal GTO with ideal anti-parallel diode

Electrical / Power Semiconductors

This model of a Gate Turn Off Thyristor has an integrated anti-parallel diode. The diode is usually included in power GTO packages.

The following parameters may either be scalars or vectors corresponding to the implicit width of the component:

Initial conductivity: Initial conduction state of the GTO. The GTO is initially blocking if the parameter evaluates to zero, otherwise it is conducting.
Thermal description: Switching losses, conduction losses and thermal equivalent circuit of the component. For more information see chapters Thermal Modeling and Losses of Semiconductor Switch with Diode.
Thermal interface resistance: The thermal resistance of the interface material between case and heat sink, in \((\mathrm{K}/\mathrm{W})\). The default is 0.
Initial temperature: This parameter is used only if the device has an internal thermal impedance and specifies the temperature of the thermal capacitance at the junction at simulation start. The temperatures of the other thermal capacitances are initialized based on a thermal “DC” analysis. If the parameter is left blank, all temperatures are initialized from the external temperature. See also Temperature Initialization.

Device voltage: The voltage measured between anode and cathode.
Device current: The current through the device flowing from anode to cathode.
Device gate signal: The gate input signal of the device.
Device conductivity: Conduction state of the internal switch. The signal outputs \(0\) when the device is blocking, and \(1\) when it is conducting.
Device junction temperature: Temperature of the first thermal capacitor in the equivalent Cauer network.
Device conduction loss: Continuous thermal conduction losses in watts \((\mathrm{W})\). Only defined if the component is placed on a heat sink.
Device switching loss: Instantaneous thermal switching losses in joules \((\mathrm{J})\). Only defined if the component is placed on a heat sink.