IGBT with Diode

Purpose

Ideal IGBT with ideal anti-parallel diode

Library

Electrical / Power Semiconductors

Description

This model of an Insulated Gate Bipolar Transistor has an integrated anti-parallel diode. The diode is usually required in AC applications such as voltage source inverters.

This device is modeled as a single ideal switch that closes when the gate signal is not zero or the voltage becomes negative and opens when the gate signal is zero and the current becomes positive.

Note

Due to the switching conditions described above, this device cannot be turned off actively while the current is exactly zero. This may result in unexpected voltage waveforms if the device is used e.g. in an unloaded converter.

To resolve this problem, either use an individual IGBT with an individual anti-parallel Diode, or allow a small non-zero load current to flow by connecting a large load resistance to the converter.

Parameters

Initial conductivity: Initial conduction state of the device. The device is initially blocking if the parameter evaluates to zero, otherwise it is conducting. This parameter may either be a scalar or a vector corresponding to the implicit width of the component. The default value is 0.
Thermal description: Switching losses, conduction losses and thermal equivalent circuit of the component. For more information see chapters Thermal Modeling and Losses of Semiconductor Switch with Diode.
Thermal interface resistance: The thermal resistance of the interface material between case and heat sink, in \((\mathrm{K}/\mathrm{W})\). The default is 0.
Initial temperature: This parameter is used only if the device has an internal thermal impedance and specifies the temperature of the thermal capacitance at the junction at simulation start. The temperatures of the other thermal capacitances are initialized based on a thermal “DC” analysis. If the parameter is left blank, all temperatures are initialized from the external temperature. See also Temperature Initialization.

Probe Signals

Device voltage: The voltage measured between collector/cathode and emitter/anode. The device voltage can never be negative.
Device current: The current through the device. The current is positive if it flows through the IGBT from collector to emitter and negative if it flows through the diode from anode to cathode.
Device gate signal: The gate input signal of the device.
Device conductivity: Conduction state of the internal switch. The signal outputs \(0\) when the device is blocking, and \(1\) when it is conducting.
Device junction temperature: Temperature of the first thermal capacitor in the equivalent Cauer network.
Device conduction loss: Continuous thermal conduction losses in watts \((\mathrm{W})\). Only defined if the component is placed on a heat sink.
Device switching loss: Instantaneous thermal switching losses in joules \((\mathrm{J})\). Only defined if the component is placed on a heat sink.