(D) Diode Statement
Dname pos neg modelName <<AREA>=area> <IC=vd> <TEMP=temp> <M=m>
.MODEL modelName D <NAME=value ...>
Dname pos neg modelName <<AREA>=area> <off> <IC=vd> <TEMP=temp> <M=m>
.MODEL modelName D <NAME=value ...>
During the operating point analysis, an initial guess for the voltage across the diode is chosen such that the diode starts at the onset of conduction.
When the off flag is set, an initial guess of zero used instead.
Note that this option does not enforce a constraint on the solution found during the operating point analysis.
The diode type
Dmust be specified in the model statement.You can customize this model by providing a list of model parameter (name-value format) at the end of the .MODEL statement.
Instance Parameters
Parameter |
Description |
Default Value |
|---|---|---|
AREA |
Device area (number of parallel devices) |
\(1\) |
IC |
Initial voltage across the diode |
none |
TEMP |
Device temperature |
\(27\,^\circ\text{C}\) |
M |
Number of parallel devices |
\(1\) |
Model Parameters
Parameter |
Value |
Default Value |
|---|---|---|
T_ABS |
Device temperature |
\(27\,^\circ\text{C}\) |
TNOM |
Nominal temperature |
\(27\,^\circ\text{C}\) |
IS |
Reverse saturation current |
\(10^{-14}\,\text{A}\) |
XTI |
Temperature exponent for IS |
\(3\) |
EG |
Band gap energy |
\(1.11\,\text{eV}\) |
N |
Emission coefficient |
\(1\) |
BV |
Reverse breakdown voltage |
\(\infty\,\text{V}\) |
IBV |
Reverse breakdown current |
\(10^{-3}\,\text{A}\) |
NBV |
Emission coefficient for the reverse breakdown current |
\(1\) |
IKF |
High-level injection knee current |
\(\infty\,\text{A}\) |
TIKF |
Temperature coefficient for IKF (first order correction) |
\(0\,{^\circ\text{C}}^{-1}\) |
ISR |
Recombination saturation current |
\(0\,\text{A}\) |
NR |
Emission coefficient for the recombination current |
\(1\) |
RS |
Series resistance |
\(0\, \Omega\) |
TRS1 |
Temperature coefficient for IKF (first order correction) |
\(0\,^\circ\text{C}^{-1}\) |
TRS2 |
Temperature coefficient for IKF (second order correction) |
\(0\,^\circ\text{C}^{-2}\) |
VJ |
Junction potential |
\(1\, \text{V}\) |
M |
Junction grading coefficient |
\(0.5\) |
CJO / CJ0 |
Zero-bias junction capacitance |
\(0\,\text{F}\) |
FC |
Forward-bias depletion capacitance coefficient |
\(0.5\) |
TT |
Forward transit time |
\(0\,\text{s}\) |
The instance parameter
TEMPoverwrites the model parameterT_ABS.The parameters representing currents and capacitances (starting with
IandC) are multiplied by theAREAparameter.The parameters representing resistances (starting with
R) are divided by theAREAparameter.
Note
Some parameters encountered in semiconductor models are provided as additional information and do not affect the simulation. PLECS Spice ignores the following parameters:
mfg,Iave,Vrev.
Examples
.MODEL diodeModel D IS=1e-12 N=1.05 RS=0.02 TT=5n CJO=100p BV=100
D1 n1 n2 diodeModel