Simple Dual Active Bridge
Purpose
Dual active bridge converter without magnetizing inductance, optimized for Real-Time Simulations on the RT Box.
Library
Electrical / Nanostep
Description
This component implements an isolated dual active bridge (DAB) converter with an optional resonant capacitor. For a DAB with magnetizing inductance, refer to the CLLLC Converter component.
Both sides of the converter have current source behavior and must each be connected directly to a capacitor or a voltage source.
The power semiconductors are modelled as ideal switches controlled by instantaneous logical gate signals. A switch is turned on when the corresponding gate signal is true.
C code generated from this component is suitable for real-time simulations on the RT Box, where it is executed on a Nanostep solver. In this case, connect the gate inputs to PWM Capture blocks from the RT Box component library.
Note
This component has a Nanostep solver weight of \(1\), indicating that it occupies \(\frac{1}{3}\) of a Nanostep solver for Real-time Simulations on the RT Box.
Note
The voltage sources connected to the converter must not be short-circuited. Therefore, combinations of switching signals that cause shoot-through of DC links are not permitted. Additionally, DC voltages across diodes must not be negative, as DC voltage clamping through diodes is not permitted.
Parameters
Certain parameters are associated with specific components. The corresponding component labels such as \(\mathrm{L}\), \(\mathrm{C}\), etc., are shown in Fig. 278.
- Semiconductor symbol
Use this setting to choose between
IGBTandMOSFETfor the symbol of the active semiconductor switches. This setting only affects the schematic representation and does not change the electrical behavior of the component.- Primary inductance
A non-zero scalar specifying the primary-side inductance \(\mathrm{L}\), including the transformer leakage inductance and any external series-connected inductor, in henries \((\mathrm{H})\).
- Winding resistance
A scalar specifying the winding resistance \(\mathrm{R_L}\), in ohms \((\Omega)\).
- Include primary capacitor
Allows you to include (
yes) or remove (no) a resonant capacitor at the primary side.- Resonant capacitance
If the Include primary capacitor option is set to
yes, this parameter requires a non-zero scalar for the capacitance \(\mathrm{C}\), in farads \((\mathrm{F})\).- Turns ratio
A scalar specifying the ratio of primary-side turns to secondary-side turns.
- Assertions
When set to
on, the block flags an error for combinations of gate signals that cause shoot-through.
Probe Signals
See Fig. 278 for the probe signal positions.
- Inductor current
The current through the inductor \(\mathrm{L}\), in amperes \((\mathrm{A})\), defined positive in the direction of the arrow.
- Capacitor voltage
The voltage across the capacitor \(\mathrm{C}\), in volts \((\mathrm{V})\), defined positive at the side marked with (+).
Nanostep Probe Signals
- Inductor current
The current through the inductor \(\mathrm{L}\), in amperes \((\mathrm{A})\), defined positive in the direction of the arrow.
- Primary current
The current at the primary-side converter terminals, in amperes \((\mathrm{A})\), defined positive in the direction of the arrow.
- Secondary current
The current at the secondary-side converter terminals, in amperes \((\mathrm{A})\), defined positive in the direction of the arrow.
- Capacitor voltage
The voltage across the capacitor \(\mathrm{C}\), in volts \((\mathrm{V})\), defined positive at the side marked with (+).
- Primary gate signals
A vector containing the gate signals of the primary-side semiconductor switches.
- Secondary gate signals
A vector containing the gate signals of the secondary-side semiconductor switches.
Fig. 278 Probes for the Simple Dual Active Bridge
↳ Added in PLECS 4.9.