3-Phase Dual Active Bridge

Purpose

3-phase dual active bridge converter without magnetizing inductance, optimized for Real-Time Simulations on the RT Box.

Library

Electrical / Nanostep

Description

../../_images/nanostep_dab3ph.svg

This component implements an isolated three-phase dual active bridge (DAB) converter with optional resonant capacitors.

Both sides of the converter have current source behavior and must each be connected directly to a capacitor or a voltage source.

The power semiconductors are modelled as ideal switches controlled by instantaneous logical gate signals. A switch is turned on when the corresponding gate signal is true.

C code generated from this component is suitable for real-time simulations on the RT Box, where it is executed on a Nanostep solver. In this case, connect the gate inputs to PWM Capture blocks from the RT Box component library.

Note

This component has a Nanostep solver weight of \(3\), indicating that it occupies one entire Nanostep solver for Real-time Simulations on the RT Box.

Note

The voltage sources connected to the converter must not be short-circuited. Therefore, combinations of switching signals that cause shoot-through of DC links are not permitted. Additionally, DC voltages across diodes must not be negative, as DC voltage clamping through diodes is not permitted.

Parameters

Certain parameters are associated with specific components. The corresponding component labels such as \(\mathrm{L}\), \(\mathrm{C}\), etc., are shown in Fig. 253.

Semiconductor symbol

Use this setting to choose between IGBT and MOSFET for the symbol of the active semiconductor switches. This setting only affects the schematic representation and does not change the electrical behavior of the component.

Primary inductance

A non-zero scalar or 3-element vector specifying the primary-side inductance \(\mathrm{L}\) per phase, including the transformer leakage inductances and any external series-connected inductors, in henries \((\mathrm{H})\).

Winding resistance

A non-zero scalar or 3-element vector specifying the winding resistances \(\mathrm{R_L}\), in ohms \((\Omega)\).

Include primary capacitors

Allows you to include (yes) or remove (no) resonant capacitors on the primary-side phases.

Resonant capacitance

If the Include primary capacitors option is set to yes, this parameter requires a non-zero scalar or 3-element vector for the capacitances \(\mathrm{C}\), in farads \((\mathrm{F})\).

Turns ratio

A scalar specifying the ratio of primary-side turns to secondary-side turns.

Assertions

When set to on, the block flags an error for combinations of gate signals that cause shoot-through.

Probe Signals

See Fig. 253 for the probe signal positions.

Inductor currents

A vector containing the currents through the inductors \(\mathrm{L}\), in amperes \((\mathrm{A})\), defined positive in the direction of the arrow.

Capacitor voltages

A vector containing the voltages across the capacitors \(\mathrm{C}\), in volts \((\mathrm{V})\), defined positive at the sides marked with (+).

Nanostep Probe Signals

Inductor currents

A vector containing the currents through the inductors \(\mathrm{L}\), in amperes \((\mathrm{A})\), defined positive in the direction of the arrow.

Primary current

The current at the primary-side converter terminals, in amperes \((\mathrm{A})\), defined positive in the direction of the arrow.

Secondary current

The current at the secondary-side converter terminals, in amperes \((\mathrm{A})\), defined positive in the direction of the arrow.

Capacitor voltages

A vector containing the voltages across the capacitors \(\mathrm{C}\), in volts \((\mathrm{V})\), defined positive at the sides marked with (+).

Primary gate signals

A vector containing the gate signals of the primary-side semiconductor switches.

Secondary gate signals

A vector containing the gate signals of the secondary-side semiconductor switches.

../../_images/nanostep_dab3ph_probe_signals.svg

Fig. 253 Probes for the 3-Phase Dual Active Bridge


↳ Added in PLECS 4.9.